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www.irf.com 1 hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ gds gate drain source to-220ab AUIRF3415 s d g d s d g features

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*+ description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit com- bined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss 150v r ds(on) max. 0.042 ? i d 43a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recover y dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 -55 to + 175 300 10 lbf in (1.1n m) 200 1.3 20 max. 43 30 150 5.0 20 590 22 automotive grade
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6 r is measured at tj approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e 150 ??? ??? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.17 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.042 ? v gs(th) gate threshold volta g e2.0???4.0v g fs forward transconductance 19 ??? ??? s i dss drain-to-source leaka g e current ??? ??? 25 a ??? ??? 250 i gss gate-to-source forward leaka g e ??? ??? 100 na gate-to-source reverse leaka g e ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e ??? ??? 200 q gs gate-to-source char g e ??? ??? 17 nc q gd gate-to-drain ("miller") char g e ??? ??? 98 t d(on) turn-on dela y time ??? 12 ??? t r rise time ??? 55 ??? t d(off) turn-off dela y time ??? 71 ??? ns t f fall time ??? 69 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from packa g e and center of die contact c iss input capacitance ??? 2400 ??? c oss output capacitance ??? 640 ??? pf c rss reverse transfer capacitance ??? 340 ??? diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 43 (body diode) a i sm pulsed source current ??? ??? 150 ( bod y diode ) v sd diode forward volta g e ??? ??? 1.3 v t rr reverse recover y time ??? 260 390 ns q rr reverse recover y char g e ??? 2.2 3.3 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v ds = 50v, i d = 22a i d = 22a v ds = 120v v gs = 20v v gs = -20v v gs = 10v, see fig. 6 & 13 i d = 22a r g = 2.5 ? t j = 25c, i s = 22a, v gs = 0v showing the integral reverse p-n junction diode. conditions r d = 3.3 ?, see fig. 10 v gs = 0v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 22a v ds = v gs , i d = 250a v ds = 150v, v gs = 0v v ds = 120v, v gs = 0v, t j = 150c mosfet symbol v dd = 75v v ds = 25v ? = 1.0mhz, see fig. 5 t j = 25c, i f = 22a
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+ , ,- ," qualification information ? to-220 n/a rohs compliant yes esd machine model class m4 (+/- 800v) ??? aec-q101-002 human body model class h2 (+/- 3500v) ??? aec-q101-001 charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level.
4 www.irf.com .# /0 1"2# 23 0 ' 23 0 ' 23 2 ' 10 100 1000 1 10 100 20us pulse width t = 25 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.5v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 1 10 100 20us pulse width t = 175 c j o top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.5v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) o v = i = gs d 10v 37a 10 100 1000 4 5 6 7 8 9 10 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j
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4 %##5 0 ,& 23 6 ' ,1" 6 51 , 23 ' 1" 51 , 23 5 7 1 , 1 10 100 0 1000 2000 3000 4000 5000 6000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j o t = 175 c j o 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c o o v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
6 www.irf.com 5,2#2' v ds 90% 10% v gs t d(on) t r t d(off) t f 5,2#8 -# $ 1 0.1 % $ 78( $ + - $ 4 %##$-2 2# # 9:' 4 %## '1" ' 2# 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - ()1 6 ' ,2' ; 6 ' ,8 -# 4 %##&- $,3 1" ' < # -8 -# < # -2' t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 9.0a 16a 22a
8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 7.' +$=7$25 > $ %&$" ++7
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10 www.irf.com ordering information base part number package type standard pack complete part number form quantit y AUIRF3415 to-220 tube 50 AUIRF3415
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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

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